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Unconventional Imaging with Backscattered Electrons

SYSNO ASEP	0367773
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Unconventional Imaging with Backscattered Electrons
Author(s)	Müllerová, Ilona (UPT-D)_{RID, SAI, ORCID} Mikmeková, Šárka (UPT-D)_{RID, SAI, ORCID} Hovorka, Miloš (UPT-D) Frank, Luděk (UPT-D)_{RID, SAI, ORCID}
Number of authors	4
Source Title	Microscopy and Microanalysis. - : Cambridge University Press - ISSN 1431-9276 Roč. 17, Suppl. 2 (2011), s. 900-901
Number of pages	2 s.
Language	eng - English
Country	US - United States
Keywords	SEM ; low energies ; grain contrast ; dopant contrast ; internal stress
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
CEZ	AV0Z20650511 - UPT-D (2005-2011)
DOI	10.1017/S143192761100537X
Annotation	Immesrsion of the sample in a scanning electron microscope to strong electric field enables one to acquire the backscattered electrons (BSE) throughout full energy and angle range of emission. BSE emitted at high angles off the surface normal provide extended crystallographic information with high grain contrast sensitive to details including visualization of the internal stress. At very low energies the BSE yield may serve as fingerprinting the grain orientation. The dopant contrast can be obtained via injection of very slow electrons.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2012

Number of the records: 1