Number of the records: 1  

Terahertz and infrared studies of antiferroelectric phase transition in multiferroic Bi.sub.0.85./sub.Nd.sub.0.15./sub.FeO.sub.3./sub..

  1. 1.
    SYSNO ASEP0367281
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleTerahertz and infrared studies of antiferroelectric phase transition in multiferroic Bi0.85Nd0.15FeO3.
    Author(s) Goian, Veronica (FZU-D) RID, ORCID
    Kamba, Stanislav (FZU-D) RID, ORCID, SAI
    Greicius, S. (LT)
    Nuzhnyy, Dmitry (FZU-D) RID, ORCID
    Karimi, S. (GB)
    Reaney, I. M. (GB)
    Source TitleJournal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
    Roč. 110, č. 7 (2011), 074112/1-074112/5
    Number of pages5 s.
    Languageeng - English
    CountryUS - United States
    Keywordsmultiferroics ; infrared and THz spectroscopy ; phonons ; antiferroelectrics
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGD202/09/H041 GA ČR - Czech Science Foundation (CSF)
    GA202/09/0682 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100520 - FZU-D (2005-2011)
    UT WOS000295883000092
    DOI10.1063/1.3650241
    AnnotationHigh-frequency dielectric studies of Bi0.85Nd0.15FeO3 ceramics performed betweeen 100 and 900 K reveal hardening of most polar phonons on cooling below antiferroelectric phase transition, which occurs near 600 K. Moreover, a strong THz dielectric relaxation is seen in paraelectric phase. Its relaxation frequency softens on cooling towards TC = 600 K, its dielectric strength simultaneously decreases, and finally the relaxation disappears from the spectra below 450 K. Both phonon and dielectric relaxation behavior are responsible for a decrease in the dielectric permittivity at the antiferroelectric phase transition. Origin of unusual strong THz dielectric relaxation in paraelectric phase is discussed.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2012
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.