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Preparation of InAs/GaAs quantum dots for BEEM/BEES
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SYSNO ASEP 0367158 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Preparation of InAs/GaAs quantum dots for BEEM/BEES Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Vaniš, Jan (URE-Y) RID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Walachová, Jarmila (URE-Y)
Vyskočil, Jan (FZU-D) RID
Oswald, Jiří (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAISource Title EWMOVPE XIV. - Wroclaw : Printing house of Wroclaw University of Technology, 2011 / Prazmowska J. - ISBN 978-83-7493-599-9 Pages s. 263-266 Number of pages 4 s. Action European Workshop on Metalorganic Vapor Phase Epitaxy /14./ Event date 05.06.2011-08.06.2011 VEvent location Wrocław Country PL - Poland Event type EUR Language eng - English Country PL - Poland Keywords InAs/GaAs ; quantum dots ; BEEM/BEES Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GAP102/10/1201 GA ČR - Czech Science Foundation (CSF) GA202/09/0676 GA ČR - Czech Science Foundation (CSF) GPP102/11/P824 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) AV0Z20670512 - URE-Y (2005-2011) Annotation Self-assembled InAs/GaAs QD layer embedded in AlGaAs heterostructure was detected by ballistic electron emission microscopy (BEEM). Ballistic current through QDs is much higher than outside of QDs, and QDs look like dark spots. Ballistic electron emission microscopy (BEES) characteristics (IB/V) were measured on individual QDs. Derivation corresponds to the density of states. Minima in the density of states are assigned to the positions of the quantum levels in the QD. The spectroscopic characteristics of individual QDs were examined. One-electron p1-like state, one-electron and two-electron ground states and excited two-electron states were found. The Coulomb interaction and exchange energies between two electrons in QDs were also determined. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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