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GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission
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SYSNO ASEP 0367155 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Vyskočil, Jan (FZU-D) RID
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Hazdra, P. (CZ)Source Title EWMOVPE XIV. - Wroclaw : Printing house of Wroclaw University of Technology, 2011 / Prazmowska J. - ISBN 978-83-7493-599-9 Pages s. 105-108 Number of pages 4 s. Action European Workshop on Metalorganic Vapor Phase Epitaxy /14./ Event date 05.06.2011-08.06.2011 VEvent location Wrocław Country PL - Poland Event type EUR Language eng - English Country PL - Poland Keywords quantum dot ; InAs ; GaAs ; GaAsSb strain reducing layer ; photoluminescence Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GAP102/10/1201 GA ČR - Czech Science Foundation (CSF) GA202/09/0676 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation In this work we report the photoluminescence (PL) at maximum wavelength 1391 nm on MOVPE prepared InAs/GaAs quantum dots (QDs) with GaAsSb strain reducing layer (SRL) maintaining the type I heterojunction between QDs and GaAsSb SRL. We present the shift of PL maximum towards longer wavelengths with increasing Sb content in SRL. This type of structure increases strongly PL efficiency, redshifts the PL peak, decreases its full width at half maximum and maintains a similar energy separation between the ground state and excited state in comparison to QDs covered only by GaAs. These properties are promising for the use of GaAsSb SRL in QD devices. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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