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Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels
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SYSNO ASEP 0366884 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels Author(s) Stolichnov, I. (CH)
Riester, S.W.E. (CH)
Mikheev, E. (CH)
Setter, N. (CH)
Rushforth, A.W. (GB)
Edmonds, K. W. (GB)
Campion, R. P. (GB)
Foxon, C. T. (GB)
Gallagher, B. L. (GB)
Jungwirth, Tomáš (FZU-D) RID, ORCID
Trodahl, H.J. (NZ)Source Title Physical Review. B - ISSN 1098-0121
Roč. 83, č. 11 (2011), 115203/1-115203/5Number of pages 5 s. Language eng - English Country US - United States Keywords ferromagnetic semiconductors ; ferroelectrics Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) 7E08087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000288447400003 DOI 10.1103/PhysRevB.83.115203 Annotation We demonstrate that the integration of ferroelectric polymer gates on Mn-doped GaAs magnetic channel provides a promising route for the persistent field-effect control of magnetic properties in high quality diluted magnetic semiconductors (DMS) that are otherwise incompatible with the traditional oxide ferroelectrics. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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