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FIB Induced Damage Examined with the Low Energy SEM
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SYSNO ASEP 0365942 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title FIB Induced Damage Examined with the Low Energy SEM Author(s) Mikmeková, Šárka (UPT-D) RID, SAI, ORCID
Matsuda, K. (JP)
Watanabe, K. (JP)
Ikeno, S. (JP)
Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Frank, Luděk (UPT-D) RID, SAI, ORCIDNumber of authors 6 Source Title Materials Transactions. - : Japan Institute of Metals and Materials - ISSN 1345-9678
Roč. 52, č. 3 (2011), s. 292-296Number of pages 5 s. Language eng - English Country JP - Japan Keywords scanning low energy electron microscopy ; focused ion beam ; beam induced damage ; sputtering Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects OE08012 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z20650511 - UPT-D (2005-2011) UT WOS 000290461000006 EID SCOPUS 79955786544 DOI 10.2320/matertrans.MB201005 Annotation The surface morphology of pure Mg was studied by means of the cathode lens mode equipped scanning low energy electron microscope after bombarding with Ga(+) ions at various energies (10, 20, 30, and 40 keV) and incident angles (0 degrees, 30 degrees, 45 degrees, and 60 degrees). In accordance with the Bradley-Harper theory at off-normal angles of incidence ripples were observed on the irradiated areas. The Monte Carlo program SRIM2008 was used to estimate the sputtering yield and damage depth. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2012
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