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Magnetism in GaN layers implanted by La, Gd, Dy and Lu

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    SYSNO ASEP0365408
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleMagnetism in GaN layers implanted by La, Gd, Dy and Lu
    Author(s) Sofer, Z. (CZ)
    Sedmidubský, D. (CZ)
    Moram, M. (GB)
    Macková, Anna (UJF-V) RID, ORCID
    Buchal, C. (DE)
    Hardtdegen, H. (DE)
    Václavů, M. (CZ)
    Peřina, Vratislav (UJF-V) RID
    Groetzschel, R. (DE)
    Mikulics, M. (DE)
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Maryško, Miroslav (FZU-D) RID
    Number of authors12
    Source TitleThin Solid Films. - : Elsevier - ISSN 0040-6090
    Roč. 519, č. 18 (2011), s. 6120-6125
    Number of pages6 s.
    Languageeng - English
    CountryCH - Switzerland
    KeywordsMagnetic semiconductors ; III-V semiconductors ; Ion implantation ; X-ray diffraction ; Rutherford backscattering spectroscopy
    Subject RIVBG - Nuclear, Atomic and Molecular Physics, Colliders
    R&D ProjectsGA104/09/1269 GA ČR - Czech Science Foundation (CSF)
    GA106/09/0125 GA ČR - Czech Science Foundation (CSF)
    GA104/09/0621 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10480505 - UJF-V (2005-2011)
    AV0Z10100521 - FZU-D (2005-2011)
    UT WOS000292576500049
    AnnotationWe present a complex study of rare earth elements implanted GaN layers grown by low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. Gd, Dy, La and Lu ions were implanted with energies of 200 key and doses ranging from 5 x 10(13) to 4 x 10(17) The chemical composition and concentration profiles of ion-implanted layers were studied by secondary ion mass spectrometry and Rutherford back scattering. The structural properties of the layers were characterized by Rutherford back scattering/channeling and X-ray diffraction reciprocal space mapping.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová,, Tel.: 266 173 228 ; Renata Glasová,, Tel.: 266 177 223
    Year of Publishing2012
Number of the records: 1