Number of the records: 1
Magnetism in GaN layers implanted by La, Gd, Dy and Lu
- 1.
SYSNO ASEP 0365408 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Magnetism in GaN layers implanted by La, Gd, Dy and Lu Author(s) Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Moram, M. (GB)
Macková, Anna (UJF-V) RID, ORCID, SAI
Buchal, C. (DE)
Hardtdegen, H. (DE)
Václavů, M. (CZ)
Peřina, Vratislav (UJF-V) RID
Groetzschel, R. (DE)
Mikulics, M. (DE)
Hejtmánek, Jiří (FZU-D) RID, ORCID
Maryško, Miroslav (FZU-D) RIDNumber of authors 12 Source Title Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 519, č. 18 (2011), s. 6120-6125Number of pages 6 s. Language eng - English Country CH - Switzerland Keywords Magnetic semiconductors ; III-V semiconductors ; Ion implantation ; X-ray diffraction ; Rutherford backscattering spectroscopy Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects GA104/09/1269 GA ČR - Czech Science Foundation (CSF) GA106/09/0125 GA ČR - Czech Science Foundation (CSF) GA104/09/0621 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10480505 - UJF-V (2005-2011) AV0Z10100521 - FZU-D (2005-2011) UT WOS 000292576500049 DOI 10.1016/j.tsf.2011.04.110 Annotation We present a complex study of rare earth elements implanted GaN layers grown by low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. Gd, Dy, La and Lu ions were implanted with energies of 200 key and doses ranging from 5 x 10(13) to 4 x 10(17) atoms.cm(-2). The chemical composition and concentration profiles of ion-implanted layers were studied by secondary ion mass spectrometry and Rutherford back scattering. The structural properties of the layers were characterized by Rutherford back scattering/channeling and X-ray diffraction reciprocal space mapping. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2012
Number of the records: 1