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Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)
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SYSNO ASEP 0364316 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P) Author(s) Kopecký, Miloš (FZU-D) RID, ORCID
Kub, Jiří (FZU-D) RID, ORCID
Máca, František (FZU-D) RID, ORCID
Mašek, Jan (FZU-D) RID
Pacherová, Oliva (FZU-D) RID, ORCID
Rushforth, A.W. (GB)
Gallagher, B. L. (GB)
Campion, R. P. (GB)
Novák, Vít (FZU-D) RID, ORCID
Jungwirth, Tomáš (FZU-D) RID, ORCIDSource Title Physical Review. B - ISSN 1098-0121
Roč. 83, č. 23 (2011), , , "235324-1"-"235324-7"Number of pages 7 s. Language eng - English Country US - United States Keywords ferrmagnetic semiconductor ; crystal structure ; magnetic anisotropy Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA100100912 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) 7E08087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100520 - FZU-D (2005-2011) AV0Z10100521 - FZU-D (2005-2011) UT WOS 000291603500009 DOI 10.1103/PhysRevB.83.235324 Annotation We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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