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Oxygen precipitation studied by x-ray diffraction techniques
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SYSNO ASEP 0362811 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Oxygen precipitation studied by x-ray diffraction techniques Author(s) Meduňa, M. (CZ)
Caha, O. (CZ)
Růžička, J. (CZ)
Bernatová, S. (CZ)
Svoboda, Milan (UFM-A) RID, ORCID
Buršík, Jiří (UFM-A) RID, ORCIDSource Title Solid State Phenomena - ISSN 1012-0394
178 -179, - (2011), s. 325-330Number of pages 6 s. Language eng - English Country CH - Switzerland Keywords Czochralski silicon ; oxygen precipitates ; x-ray Laue diffraction Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/09/1013 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20410507 - UFM-A (2005-2011) UT WOS 000303356300052 DOI 10.4028/www.scientific.net/SSP.178-179.325 Annotation We report on study of oxygen precipitates grown of Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry. The analysis of diffraction curves in Laue geometry was done using Takagi equations and statistical dynamical theory of diffraction. These techniques allow us to determine as the radius of defect area as the defect concentrations from measurement in Laue geometry. These results obtained on silicon wafers exposed to two-step and three-step treatments were compared with other experimental techniques including transmission electron microscopy and infrared absorption spectroscopy, while only the largest precipitates are detected by other techniques. The results of all methods are good agreement. Workplace Institute of Physics of Materials Contact Yvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485 Year of Publishing 2012
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