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Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

SYSNO ASEP	0361428
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
Author(s)	Hara, K. (JP) Affolder, A.A. (GB) Allport, P.P. (GB) Bates, R. (GB) Betancourt, C. (US) Böhm, Jan (FZU-D) Brown, H. (GB) Buttar, C. (GB) Carter, J. R. (GB) Casse, G. (GB) Mikeštíková, Marcela (FZU-D)_{RID, ORCID}
Number of authors	74
Source Title	Nuclear Instruments & Methods in Physics Research Section A. - : Elsevier - ISSN 0168-9002 Roč. 636, č. 1 (2011), "S83"-"S89"
Number of pages	7 s.
Language	eng - English
Country	NL - Netherlands
Keywords	p-bulk silicon ; microstrip ; charge collection ; radiation damage
Subject RIV	BF - Elementary Particles and High Energy Physics
R&D Projects	LA08032 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
CEZ	AV0Z10100502 - FZU-D (2005-2011)
UT WOS	000291416400015
DOI	10.1016/j.nima.2010.04.090
Annotation	We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2013

Number of the records: 1