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InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

SYSNO ASEP	0359526
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
Author(s)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Vyskočil, Jan (FZU-D)_RID Oswald, Jiří (FZU-D)_{RID, ORCID} Vetushka, Aliaksi (FZU-D)_{RID, ORCID} Caha, O. (CZ) Hazdra, P. (CZ) Kuldová, Karla (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 317, č. 1 (2011), s. 39-42
Number of pages	4 s.
Language	eng - English
Country	NL - Netherlands
Keywords	low dimensional structures ; photoluminescence ; low-pressure MOVPE ; InAs/GaAs quantum dots ; semiconducting III–V materials
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GAP102/10/1201 GA ČR - Czech Science Foundation (CSF)
	GAP108/10/0253 GA ČR - Czech Science Foundation (CSF)
	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA202/09/0676 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000288837700008
DOI	10.1016/j.jcrysgro.2010.12.076
Annotation	InAs/GaAs quantum dot(QD)properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grow nunder the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can beconsiderably changed depending on the V/III ratio under kinetically limited growth.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2012

Number of the records: 1