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Effect of nitrogen doping on TiO.sub.x./sub.N.sub.y./sub. thin film formation at reactive high-power pulsed magnetron sputtering
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SYSNO ASEP 0358730 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering Author(s) Straňák, Vítězslav (FZU-D) RID, ORCID
Quaas, M. (DE)
Bogdanowicz, R. (PL)
Steffen, H. (DE)
Wulff, H. (DE)
Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
Tichý, M. (CZ)
Hippler, R. (DE)Source Title Journal of Physics D-Applied Physics. - : Institute of Physics Publishing - ISSN 0022-3727
Roč. 43, č. 28 (2010), s. 1-7Number of pages 7 s. Language eng - English Country GB - United Kingdom Keywords magnetron sputtering ; TiO2 ; pulse discharge ; XRD ; band gap Subject RIV BL - Plasma and Gas Discharge Physics R&D Projects KAN301370701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) 1M06002 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100522 - FZU-D (2005-2011) UT WOS 000279318600010 DOI 10.1088/0022-3727/43/28/285203 Annotation The paper is focused on a study of formation of TiOxNy thin films prepared by pulsed magnetron sputtering of metallic Ti target. The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. Post-deposition thermal annealing was not employed. The chemical composition from x-ray photoelectron spectroscopy diagnostic reveals formation of TiOxNy structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N element's incorporation into the TiO lattice. Decrease in band-gap to values Eg ~ 1.6 eV in TiOxNy thin film is attributed to formed TiN bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar+, Ti+, Ti) is presented together with peak discharge current. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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