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Properties of thiolate monolayers formed on different amalgam electrodes
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SYSNO ASEP 0358449 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Properties of thiolate monolayers formed on different amalgam electrodes Author(s) Josypčuk, Bohdan (UFCH-W) RID, SAI, ORCID
Mareček, Vladimír (UFCH-W) RIDSource Title Journal of Electroanalytical Chemistry. - : Elsevier - ISSN 1572-6657
Roč. 653, 1-2 (2011), s. 7-13Number of pages 7 s. Language eng - English Country CH - Switzerland Keywords thiolate monolayer ; reductive desorption ; charge effect Subject RIV CG - Electrochemistry R&D Projects IAA400400806 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GAP206/11/1638 GA ČR - Czech Science Foundation (CSF) LC06063 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z40400503 - UFCH-W (2005-2011) UT WOS 000288722600002 DOI 10.1016/j.jelechem.2011.01.017 Annotation Formation and properties of thiol (HS(CH2)10COOH or HS(CH2)10CH3) monolayers were investigated at stationary electrodes based on silver, copper, bismuth and cadmium solid amalgams covered by a mercury meniscus or by a mercury film (m-AgSAE, MF-AgSAE, m-CuSAE, m-BiAgSAE and m-CdSAE). For comparison, parallel experiments were performed at a classical hanging mercury drop electrode (HMDE). Thiol monolayers were prepared at an optimal deposition potential (e.g., for HS(CH2)10COOH Eac = −350 mV for HMDE and silver amalgam electrodes, Eac = −750 to −800 mV for m-CuSAE and m-BiAgSAE, and Eac = −1050 mV for m-CdSAE) at which the formed layers exhibit high density and stability. It was found that the potential of a reductive desorption peak of a thiol monolayer strongly depends on the metal which forms the amalgam (for HS(CH2)10COOH: Ep = −864 to −859 mV for HMDE and silver amalgam electrodes, Em-BiAgSAE = −1079 mV, Em-CuSAE = −1136 mV and Em-CdSAE = −1248 mV). Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2012
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