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Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers
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SYSNO ASEP 0357219 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers Author(s) Ha, N.N. (NL)
Dohnalová, Kateřina (FZU-D) RID, ORCID
Gregorkiewicz, T. (NL)
Valenta, J. (CZ)Source Title Physical Review. B - ISSN 1098-0121
Roč. 81, č. 19 (2010), 195206/1-195206/6Number of pages 6 s. Language eng - English Country US - United States Keywords optical parametric oscillators ; nonlinear waveguides ; laser materials ; nonlinear optical crystals Subject RIV BH - Optics, Masers, Lasers CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000278142000058 DOI 10.1103/PhysRevB.81.195206 Annotation We present investigations of the optical gain cross section of 1.54 μm Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow (full width at half maximum below 8 μeV) emission originating from the unique Er-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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