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Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

SYSNO ASEP	0357129
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
Author(s)	Mašek, Jan (FZU-D)_RID Máca, František (FZU-D)_{RID, ORCID} Kudrnovský, Josef (FZU-D)_{RID, ORCID} Makarovský, O. (GB) Eaves, L. (GB) Campion, R. P. (GB) Edmonds, K. W. (GB) Rushforth, A.W. (GB) Foxon, C. T. (GB) Gallagher, B. L. (GB) Novák, Vít (FZU-D)_{RID, ORCID} Sinova, Jairo (FZU-D)_{RID, ORCID} Jungwirth, Tomáš (FZU-D)_{RID, ORCID}
Source Title	Physical Review Letters. - : American Physical Society - ISSN 0031-9007 Roč. 105, č. 22 (2010), 227202/1-227202/4
Number of pages	4 s.
Language	eng - English
Country	US - United States
Keywords	gallium arsenide ; semiconductors
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA202/07/0456 GA ČR - Czech Science Foundation (CSF)
	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100520 - FZU-D (2005-2011)
UT WOS	000284532900026
DOI	10.1103/PhysRevLett.105.227202
Annotation	We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parametrization and the full potential local-density approximation+U calculations give a very similar band structure whose microscopic spectral character is consistent with the physical premise of the k·p kinetic-exchange model.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2011

Number of the records: 1