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Internal fields in nanostructured silicon thin films for photovoltaics
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SYSNO ASEP 0356890 Document Type C - Proceedings Paper (int. conf.) R&D Document Type The record was not marked in the RIV Title Internal fields in nanostructured silicon thin films for photovoltaics Author(s) Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Vetushka, Aliaksi (FZU-D) RID, ORCID
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Červenka, Jiří (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Kalusová, V. (CZ)
Lukšík, M. (CZ)
Kočka, Jan (FZU-D) RID, ORCID, SAISource Title Proceedings of the 3rd International Symposium on Innovative Solar Cells. - Tokyo : Tokyo Institute of Technology, 2010 - ISBN N Pages s. 63-70 Number of pages 8 s. Action International Symposium on Innovative Solar Cells /3./ Event date 07.10.2010-08.10.2010 VEvent location Tokyo Country JP - Japan Event type WRD Language eng - English Country JP - Japan Keywords nanocrystalline ; silicon ; thin films ; photovoltaics Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation Individual grains in Si thin films grown at the boundary between amorphous and microcrystalline growth have sizes from 10s to 100s nm. Difference in conductivity of the grain and surrounding amorphous phase leads to concentration of internal electric field and thus also the current density and other fields (e.g. heat generation density due to the ohmic losses or internal strain). This has consequences for local electronic measurements using the scanning probe microscopy, which we develop in our laboratory, but also to the processes taking part in the solar cells. Variations of local fields are commonly not taken into account for discussion of photovoltaic solar energy conversion, in spite of the fact that the structures have dimensions comparable to the photon wavelengths. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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