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Growth and properties of epitaxial Ce-doped YAG and LuAGfilms for scintillators

    1.
    SYSNO ASEP0356301
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleGrowth and properties of epitaxial Ce-doped YAG and LuAGfilms for scintillators
    Author(s) Kučera, M. (CZ)
    Nitsch, Karel (FZU-D) RID
    Nikl, Martin (FZU-D) RID, ORCID, SAI
    Daniš, S. (CZ)
    Hanuš, M. (CZ)
    Source TitleJournal of Physics: Conference Series. - : Institute of Physics Publishing - ISSN 1742-6588
    Roč. 249, č. 1 (2010), 012020/1-012020/9
    Number of pages9 s.
    Languageeng - English
    CountryGB - United Kingdom
    KeywordsCe: YAG and Ce:LuAG epitaxial films ; scintillation ; liquid phase epitaxy
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsKAN300100802 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z10100521 - FZU-D (2005-2011)
    DOI10.1088/1742-6596/249/1/012020
    AnnotationCe-doped YAG and LuAG epitaxial films were prepared and characterized when searching efficient thin films scintillators. The films were prepared by the liquid phase epitaxy using three various fluxes with the goal to find the flux-related impurities influencing optical, scintillation, crystallographic, and emission properties of the films as well their morphology
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2011
Number of the records: 1  

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