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EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs
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SYSNO ASEP 0356059 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs Author(s) Nohavica, Dušan (URE-Y)
Grym, Jan (URE-Y)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Gladkov, Petar (URE-Y)
Jarchovský, Zdeněk (URE-Y)Number of authors 6 Source Title CONFERENCE PROCEEDINGS NANOCON 2010. - Ostrava : TANGER, 2010 / Zbořil R. - ISBN 978-80-87294-19-2 Pages s. 28-33 Number of pages 6 s. Action NANOCON 2010. International Conference /2./ Event date 12.10.2010-14.10.2010 VEvent location Olomouc Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Keywords A3B5 ; micropores ; heteroepitaxy Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering CEZ AV0Z20670512 - URE-Y (2005-2011) AV0Z10100521 - FZU-D (2005-2011) UT WOS 000286656400004 Annotation Structural and optical properties of micro and nano-porous InP and GaAs substrates used for an epitaxial overgrowth of thin films were investigated. Both crystalographically oriented (CO) and current line oriented (CLO) pore networks were created by electrochemical dissolution. Heat treatment of InP pores at 650oC and GaAs pores at 750-850oC converted them into microcavities The capability of improved structural quality homo- and hetero-epitaxially overgrown films on the porous InP, was also demonstrated by LPE growth of InP and InAs and GaInAs on GaAs by MOVPE technology. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2012
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