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STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS
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SYSNO ASEP 0356058 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS Author(s) Žďánský, Karel (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Grym, Jan (URE-Y)
Černohorský, O. (CZ)
Zavadil, Jiří (URE-Y) RID
Kostka, František (URE-Y)Number of authors 6 Source Title CONFERENCE PROCEEDINGS NANOCON 2010. - Ostrava : TANGER, 2010 / Zbořil R. - ISBN 978-80-87294-19-2 Pages s. 182-187 Number of pages 6 s. Action NANOCON 2010. International Conference /2./ Event date 12.10.2010-14.10.2010 VEvent location Olomouc Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Keywords semiconductor devices ; nanostructures ; sensors Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000286656400031 Annotation Deposition of Pd nanoparticles (NPs) on InP or GaN single crystal wafer was performed from isooctane colloid solution. Diodes were prepared by making Schottky contact with colloidal graphite on Pd NPs partly coated surface and ohmic contact on the blank side of the wafer. It was found that several ppb of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Diodes made on GaN were about ten times more sensitive to hydrogen than those made on InP. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2012
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