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Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects
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SYSNO ASEP 0355867 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects Author(s) Dubecký, F. (SK)
Ladzianský, M. (SK)
Kindl, Dobroslav (FZU-D) RID
Nečas, V. (SK)Source Title ASDAM 2010. - Piscataway : IEEE, 2010 / Breza J. ; Donoval D. ; Vavrinsky E. - ISBN 978-1-4244-8572-7 Pages s. 207-210 Number of pages 4 s. Action ASDAM 2010 - The Eight International Conference on Advanced Semiconductor Devices and Microsystems Event date 25.10.2010-27.10.2010 VEvent location Smolenice Castle Country SK - Slovakia Event type WRD Language eng - English Country US - United States Keywords SI GaAs detectors ; neutron bombardment ; deep levels ; PICTS Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation Degradation of semi-insulating GaAs detectors after fast neutron bombardment was investigated by means of I-V and PICTS measurements. Significant rise of detector reverse current as well as formation of dominating neutron-induced deep-level complex defect is observed at high neutron fluencies. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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