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Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth

SYSNO ASEP	0355161
Document Type	C - Proceedings Paper (int. conf.)
R&D Document Type	Conference Paper
Title	Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth
Author(s)	Kromka, Alexander (FZU-D)_{RID, ORCID, SAI} Babchenko, Oleg (FZU-D)_{RID, ORCID} Rezek, Bohuslav (FZU-D)_{RID, ORCID} Hruška, Karel (FZU-D)_{RID, ORCID} Purkrt, A. (CZ) Remeš, Zdeněk (FZU-D)_{RID, ORCID}
Number of authors	6
Source Title	Diamond Electronics and Bioelectronics - Fundamentals to Applications III. - Warrendale, PA : Materials Research Society, 2010 / Bergonzo P. ; Butler J.E. ; Jackman R.B. ; Loh K.P. ; Nesladek M. - ISBN 978-1-60511-176-6
Pages	s. 137-143
Number of pages	7 s.
Action	MRS Fall Meeting 2009
Event date	30.11.2009-04.12.2009
VEvent location	Boston
Country	US - United States
Event type	WRD
Language	eng - English
Country	US - United States
Keywords	diamond ; plasma-enhanced CVD (PECVD) (deposition) ; microstructure
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	IAAX00100902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	KAN400480701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
Annotation	We employ UV photolithographic and electron beam lithographic patterning of diamond seeding layer on SiO2/Si substrates for the selective growth of micrometer and sub-micrometer diamond patterns. Using bottom-up strategy, thin diamond channels (470 nm in width) are directly grown. Differences between wet chemical and plasma treatment on the patterned diamond growth are studied. We find that the density of parasitic diamond crystals (outside predefined patterns) is lowered for gas mixture CF4/O2 plasma than for rich O2 plasma. After CF4/O2 plasma treatment, the density of parasitic crystals is 106 cm-2 which is comparable to the wet chemical treatment. Introducing sandwich-like structure, i.e. photoresist-seeding layer-photoresist, and its treatment (lift-off and CF4/O2 plasma) further reduces the density of parasitic crystals down to 105 cm-2.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2011

Number of the records: 1