Number of the records: 1

Toward surface-friendly treatment of seeding layer and selected-area diamond growth

SYSNO ASEP	0354793
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Toward surface-friendly treatment of seeding layer and selected-area diamond growth
Author(s)	Babchenko, Oleg (FZU-D)_{RID, ORCID} Ižák, Tibor (FZU-D)_RID Ukraintsev, Egor (FZU-D)_{RID, ORCID} Hruška, Karel (FZU-D)_{RID, ORCID} Rezek, Bohuslav (FZU-D)_{RID, ORCID}
Number of authors	5
Source Title	Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972 Roč. 247, 11-12 (2010), s. 3026-3029
Number of pages	4 s.
Language	eng - English
Country	DE - Germany
Keywords	diamond structuring ; lithography ; reactive ion etching ; selected-area deposition
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	KAN400480701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	IAAX00100902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	1M06002 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000285798400091
DOI	10.1002/pssb.201000124
Annotation	Several technological approaches of applying photoresistive polymer for patterning the diamond seeding layer while minimizing damage of substrate surface is reported. Reactive ion etching (i.e., dry process) and wet photolithographical processing using two polymer layers are compared and combined as treatment techniques. Subsequently, diamond structures are deposited by microwave plasma enhanced chemical vapor deposition from a gas mixture of methane diluted in hydrogen. The highest efficiency for selected-area deposition, with the parasitic density as low as the technological limit of 105 cm−2, was achieved by combining the two treatment techniques. Technological advantages and limitation of dry and wet treatment process are pointed out.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2011

Number of the records: 1