Number of the records: 1

Spin Hall effect transistor

SYSNO ASEP	0354545
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Spin Hall effect transistor
Author(s)	Wunderlich, Joerg (FZU-D)_{RID, ORCID} Park, B.G. (GB) Irvine, A.C. (GB) Zarbo, Liviu (FZU-D) Rozkotová, E. (CZ) Němec, P. (CZ) Novák, Vít (FZU-D)_{RID, ORCID} Sinova, Jairo (FZU-D)_{RID, ORCID} Jungwirth, Tomáš (FZU-D)_{RID, ORCID}
Number of authors	9
Source Title	Science. - : American Association for the Advancement of Science - ISSN 0036-8075 Roč. 330, č. 6012 (2010), s. 1801-1804
Number of pages	4 s.
Language	eng - English
Country	US - United States
Keywords	spin Hall effect ; spintronics ; spin transistor
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000285603700034
DOI	10.1126/science.1195816
Annotation	Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics, which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2011

Number of the records: 1