Number of the records: 1
Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry
- 1.
SYSNO ASEP 0354476 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry Author(s) Olejník, Kamil (FZU-D) RID, ORCID
Wadley, P. (GB)
Haigh, J.A. (GB)
Edmonds, K. W. (GB)
Campion, R. P. (GB)
Rushforth, A.W. (GB)
Gallagher, B. L. (GB)
Foxon, C. T. (GB)
Jungwirth, Tomáš (FZU-D) RID, ORCID
Wunderlich, Joerg (FZU-D) RID, ORCID
Dhesi, S.S. (GB)
Cavill, S.A. (GB)
van der Laan, G. (GB)
Arenholz, E. (US)Number of authors 14 Source Title Physical Review. B - ISSN 1098-0121
Roč. 81, č. 10 (2010), 104402/1-104402/5Number of pages 5 s. Language eng - English Country US - United States Keywords ferromagnetic semiconductors ; exchange bias Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000276248700064 DOI 10.1103/PhysRevB.81.104402 Annotation We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. The (Ga,Mn)As interface layer remains polarized at room temperature. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
Number of the records: 1