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Effect of Fe doping on the terahertz conductivity of GaN single crystals
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SYSNO ASEP 0354453 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Effect of Fe doping on the terahertz conductivity of GaN single crystals Author(s) Kadlec, Filip (FZU-D) RID, ORCID, SAI
Kadlec, Christelle (FZU-D) RID, ORCID
Paskova, T. (US)
Evans, K. (US)Source Title Journal of Physics D-Applied Physics. - : Institute of Physics Publishing - ISSN 0022-3727
Roč. 43, č. 14 (2010), 145401/1-145401/5Number of pages 5 s. Language eng - English Country GB - United Kingdom Keywords gallium nitride ; terahertz spectroscopy ; iron doping Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100520 - FZU-D (2005-2011) UT WOS 000275891300014 DOI 10.1088/0022-3727/43/14/145401 Annotation Bulk single crystals of GaN with different degrees of Fe doping were studied using time-domain terahertz spectroscopy at high temperatures. Features due to free carriers were observed in the complex permittivity spectra with a pronounced dependence on both doping and temperature. Fitting the spectra using the Drude model made it possible to deduce a defect ionization energy of 16 meV in the undoped sample while the spectra of doped samples are consistent with an ionization energy of 60 meV. Also, the free carrier concentrations at temperatures from 300 to 900 K were estimated. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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