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Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor

SYSNO ASEP	0354206
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor
Author(s)	Ciccarelli, C. (GB) Park, B.G. (GB) Ogawa, S. (GB) Ferguson, A.J. (GB) Wunderlich, Joerg (FZU-D)_{RID, ORCID}
Number of authors	5
Source Title	Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951 Roč. 97, č. 8 (2010), 082106/1-082106/3
Number of pages	3 s.
Language	eng - English
Country	US - United States
Keywords	MOSFET
Subject RIV	BM - Solid Matter Physics ; Magnetism
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000281306500036
DOI	10.1063/1.3475771
Annotation	We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2011

Number of the records: 1