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Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors
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SYSNO ASEP 0353864 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors Author(s) Vašek, Petr (FZU-D) RID
Svoboda, Pavel (FZU-D)
Novák, Vít (FZU-D) RID, ORCID
Cukr, Miroslav (FZU-D)
Výborný, Karel (FZU-D) RID, ORCID
Jurka, Vlastimil (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Orlita, Milan (FZU-D)
Maude, D. K. (FR)Source Title Journal of Superconductivity and Novel Magnetism. - : Springer - ISSN 1557-1939
Roč. 23, č. 6 (2010), 1161-1163Number of pages 3 s. Language eng - English Country US - United States Keywords GaMnAs ; anisotropic magnetoresistance ; hydrogenation Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) MEB020928 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000278580900067 DOI 10.1007/s10948-010-0664-5 Annotation The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Differend behaviour of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of stain during treatment. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
Number of the records: 1