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Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy
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SYSNO ASEP 0353507 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy Author(s) Kučera, M. (CZ)
Nitsch, Karel (FZU-D) RID
Nikl, Martin (FZU-D) RID, ORCID, SAI
Hanuš, M. (CZ)Number of authors 4 Source Title Radiation Measurements. - : Elsevier - ISSN 1350-4487
Roč. 45, 3-6 (2010), s. 449-452Number of pages 4 s. Language eng - English Country GB - United Kingdom Keywords YAG ; LuAG ; Ce-doping garnet ; liquid phase epitaxy ; luminescence Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KAN300100802 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/08/0893 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000279183200059 DOI 10.1016/j.radmeas.2009.12.031 Annotation Epitaxial Lu3Al5O12 (LuAG) and Y3Al5O12 (YAG) garnet layers doped by Ce ions were grown by the liquid phase epitaxy. The effect of the flux composition, growth conditions, and substrate polishing on the layer morphology, creation of defects, and on optical and emission properties of layers was studied. The defects typical of the epitaxial growth are discussed. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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