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Scintillation properties of LuAG:Ce single crystalline films grown by LPE method
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SYSNO ASEP 0353473 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Scintillation properties of LuAG:Ce single crystalline films grown by LPE method Author(s) Průša, Petr (FZU-D) RID, ORCID
Mareš, Jiří A. (FZU-D) RID, ORCID
Nikl, Martin (FZU-D) RID, ORCID, SAI
Kučera, M. (CZ)
Nitsch, Karel (FZU-D) RID
Hanus, M. (CZ)Number of authors 6 Source Title Optical Materials. - : Elsevier - ISSN 0925-3467
Roč. 32, č. 10 (2010), s. 1360-1363Number of pages 4 s. Language eng - English Country NL - Netherlands Keywords LuAG:Ce ; LPE method ; scintillation ; photoelectron yield Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KAN300100802 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000281935100023 DOI 10.1016/j.optmat.2010.04.010 Annotation Lu3Al5O12:Ce (LuAG:Ce) thin films were grown from the PbO–B2O3 (PB) and BaO–B2O3–BaF2 (BBB) fluxes using the liquid phase epitaxy method (LPE). Photoelectron yield, its time dependence, and energy resolution were measured under a-particle excitation Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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