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The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
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SYSNO ASEP 0353061 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene Author(s) Kalbáč, Martin (UFCH-W) RID, ORCID
Reina-Cecco, A. (US)
Farhat, H. (US)
Kong, J. (US)
Kavan, Ladislav (UFCH-W) RID, ORCID
Dresselhaus, M. S. (US)Source Title ACS Nano. - : American Chemical Society - ISSN 1936-0851
Roč. 4, č. 10 (2010), s. 6055-6063Number of pages 9 s. Language eng - English Country US - United States Keywords graphene ; Raman spectroscopy ; spectroelectrochemistry Subject RIV CG - Electrochemistry R&D Projects IAA400400911 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IAA400400804 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) KAN200100801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) ME09060 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GC203/07/J067 GA ČR - Czech Science Foundation (CSF) GAP204/10/1677 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z40400503 - UFCH-W (2005-2011) UT WOS 000283453700075 DOI 10.1021/nn1010914 Annotation Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with Increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2011
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