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Scanning transmission low energy electron microscopy
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SYSNO ASEP 0352939 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Scanning transmission low energy electron microscopy Author(s) Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Hovorka, Miloš (UPT-D)
Frank, Luděk (UPT-D) RID, SAI, ORCIDNumber of authors 3 Source Title The 7th International Workshop on LEEM/PEEM. - New York : IBM T.J. Watson Research Center, 2010
S. 25Number of pages 1 s. Action LEEM/PEEM /7./ Event date 08.08.2010-13.08.2010 VEvent location New York Country US - United States Event type WRD Language eng - English Country US - United States Keywords scanning electron microscope ; he low energy electron microscope ; graphene Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects IAA100650902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20650511 - UPT-D (2005-2011) Annotation The standard scanning electron microscope (SEM) and the low energy electron microscope (LEEM) examine surface structures using reflected electrons. The cathode lens (CL) principle with negatively biased sample, used in emission microscopes, was introduced in the SEM in order to work at arbitrarily low energy. Anode of the CL, inserted to above the sample, consists of a one channel scintillation detector with a small central bore (0.3mm) and collects reflected electrons accelerated in the CL field. Another detector, based on the PIN structure, is positioned below the sample and acquires signal transmitted through thin foils and similarly accelerated. In the very low energy range we rely on the inelastic mean free path of electrons steeply extending below about 50 eV, and hence on increased penetrability of electrons, at last through crystallinic layers. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2011
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