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Luminescence properties of Er:LiNbO3 thin layers fabricated by ion implantation

  1. 1.
    SYSNO ASEP0351934
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeThe record was not marked in the RIV
    TitleLuminescence properties of Er:LiNbO3 thin layers fabricated by ion implantation
    Author(s) Nekvindová, P. (CZ)
    Cajzl, J. (CZ)
    Švecová, B. (CZ)
    Macková, Anna (UJF-V) RID, ORCID, SAI
    Oswald, J. (CZ)
    Kolitsch, A. (DE)
    Špirková, J. (CZ)
    Number of authors7
    Source TitleICOOPMA, book of abstracts. - Madarsko : ICOOPMA, book of abstracts, Budapešt, 2010
    Pagess. 116-117
    Number of pages2 s.
    ActionICOOPMA 2010-Fourth International Conference on Optice
    Event date15.08.2010-20.08.2010
    VEvent locationBudapešť
    CountryHU - Hungary
    Event typeEUR
    Languageeng - English
    CountryHU - Hungary
    KeywordsLithium niobate ; Erbium ; Ion implantation ; Luminescence
    Subject RIVBG - Nuclear, Atomic and Molecular Physics, Colliders
    R&D ProjectsLC06041 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z10480505 - UJF-V (2005-2011)
    AnnotationSingle crystals like lithium niobate are frequently doped with optically active rare earth or transition metal ions for a variety of applications in optical devices such as solid state lasers, amplifiers or sensors. From a practical point of view it would be very attractive to create a material system where the energy of the emitted photons is close to the pumping energy, therefore the intention in integrated optics was to explore the IR region and more specifically the three telecommunication windows laying between 0.9 and 1.6 µm. To exploit the potential of the Er: LiNbO3 one must ensure high intensity of the 1.5 µm luminescence as an inevitable prerequisity. For that generally crystalline materials are particularly suitable, due to that well known fact that crystal field formed by the atoms surrounding the lasing ions can strongly affect the resulting luminescence properties. The ion implantation technique is one of the ways to prepare a laser active ions doped optical layers.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing2011
Number of the records: 1  

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