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Imaging of dopants under presence of surface ad-layers

SYSNO ASEP	0350664
Document Type	C - Proceedings Paper (int. conf.)
R&D Document Type	Conference Paper
Title	Imaging of dopants under presence of surface ad-layers
Author(s)	Mika, Filip (UPT-D)_{RID, SAI, ORCID} Hovorka, Miloš (UPT-D) Frank, Luděk (UPT-D)_{RID, SAI, ORCID}
Number of authors	3
Source Title	Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. - Brno : Institute of Scientific Instruments AS CR, v.v.i, 2010 / Mika F. - ISBN 978-80-254-6842-5
Pages	s. 35-36
Number of pages	2 s.
Action	International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./
Event date	31.05.2010-04.06.2010
VEvent location	Skalský dvůr
Country	CZ - Czech Republic
Event type	WRD
Language	eng - English
Country	CZ - Czech Republic
Keywords	scanning electron microscopy ; semiconductor structures ; image contrast ; dopant concentration ; secondary electron emission
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	GP102/09/P543 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z20650511 - UPT-D (2005-2011)
UT WOS	000290773700012
Annotation	Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast between differently doped areas is observable in the secondary electron emission. Quantitative relation exists between the image contrast and the dopant concentration. However, further examination has shown the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of ad-layers on the semiconductor surface.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2011

Number of the records: 1