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Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection

SYSNO ASEP	0350311
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection
Author(s)	Matuchová, M. (CZ) Žďánský, Karel (URE-Y) Zavadil, Jiří (URE-Y)_RID Tonn, J. (DE) Mousa, M. (JO) Dinilewsky, A. N. (DE) Croll, A. (DE) Maixner, J. (CZ)
Number of authors	8
Source Title	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 312, č. 8 (2010), s. 1233-1239
Number of pages	7 s.
Language	eng - English
Country	NL - Netherlands
Keywords	semiconductor devices ; doping ; detectors
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	KAN401220801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z20670512 - URE-Y (2005-2011)
UT WOS	000277039100040
DOI	10.1016/j.crysgro.2009.12.034
Annotation	Lead iodide crystals were synthesized with stoichiometric composition and with an excess of iodine or lead. Some crystals were doped by Ag, Au, Ge and a number of rare-earth elements (RE). HRXRD, EBSD, electrical resistivity, low temperature PL and optical transmittance confirm good crystal quality. Stoichiometric composition or low excess of lead give the best quality crystals. Doping with Ag leads to considerable decrease of electrical resistivity. RE doping generally leads to decrease of optical gap.
Workplace	Institute of Radio Engineering and Electronics
Contact	Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
Year of Publishing	2011

Number of the records: 1