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Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface
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SYSNO ASEP 0349319 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface Author(s) Dubecký, F. (SK)
Hubík, Pavel (FZU-D) RID, ORCID
Gombia, E. (IT)
Zat'ko, B. (SK)
Kindl, Dobroslav (FZU-D) RID
Dubecký, M. (SK)
Boháček, P. (SK)Source Title SURFINT-SREN II. - Bratislava : Comenius University, 2010 / Brunner R. - ISBN 978-80-223-2723-7 Pages s. 19-22 Number of pages 4 s. Action Progress in Applied Surface, Interface and Thin Film Science 2009 Event date 16.11.2009-19.11.2009 VEvent location Florence Country IT - Italy Event type WRD Language eng - English Country SK - Slovakia Keywords SI-GaAs ; X-ray detectors ; charge transport ; metallization Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/07/0525 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation Radiation detector structures made of semiinsulating GaAs were prepared with a new kind of low-work function metallization. I-V curves were measured in different geometries of both top and bottom contacts. Anomalous decrease of the reverse current observed for Mg and Gd contacts is discussed. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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