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Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface
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SYSNO ASEP 0349314 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface Author(s) Dubecký, F. (SK)
Kováč, J. (SK)
Mudroň, J. (SK)
Hubík, Pavel (FZU-D) RID, ORCID
Dubecký, M. (SK)
Gombia, E. (IT)Source Title APCOM 2010. - Bratislava : Slovak University of Technology, 2010 / Vajda J. ; Weis M. - ISBN 978-80-227-3307-6 Pages s. 29-32 Number of pages 4 s. Action International Conference on Applied Physics of Condensed Matter /16./ Event date 16.06.2010-18.06.2010 VEvent location Malá Lučivná Country SK - Slovakia Event type EUR Language eng - English Country SK - Slovakia Keywords SI-GaAs ; detectors ; photocurrent ; blocking electrodes Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation SI GaAs based photodetectors were studied by photocurrent and current-voltage methods. Features observed in photocurrent spectra of the detectors with Gd top contact indicate special properties of this kind of the metallization and, possibly, a formation of 2D system near the contact. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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