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Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge
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SYSNO ASEP 0348989 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge Author(s) Trunec, D. (CZ)
Zajíčková, L. (CZ)
Bursíková, V. (CZ)
Studnička, F. (CZ)
Sťahel, P. (CZ)
Prysiazhnyi, V. (CZ)
Peřina, Vratislav (UJF-V) RID
Houdková, Jana (FZU-D) RID, ORCID
Navrátil, Z. (CZ)
Franta, D. (CZ)Source Title Journal of Physics D-Applied Physics. - : Institute of Physics Publishing - ISSN 0022-3727
Roč. 43, č. 22 (2010), 225403/1-225403/8Number of pages 8 s. Language eng - English Country GB - United Kingdom Keywords GLOW-DISCHARGE ; CHEMICAL-STRUCTURE ; PLASMA Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders CEZ AV0Z10480505 - UJF-V (2005-2011) AV0Z10100521 - FZU-D (2005-2011) UT WOS 000277871500011 DOI 10.1088/0022-3727/43/22/225403 Annotation An atmospheric pressure dielectric barrier discharge burning in nitrogen with a small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, and the substrate temperature during the deposition process was increased up to values within the range 25-150 degrees C in order to obtain hard SiOx-like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterized by the Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and the depth sensing indentation technique. It was found that the films' properties depend significantly on the substrate temperature at deposition. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2011
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