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Raman scattering in silicon disordered by gold ion implantation

SYSNO ASEP	0346873
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Raman scattering in silicon disordered by gold ion implantation
Author(s)	Lavrentiev, Vasyl (UJF-V)_{RID, ORCID, SAI} Vacík, Jiří (UJF-V)_{RID, ORCID, SAI} Vorlíček, Vladimír (FZU-D)_RID Voseček, Václav (UJF-V)_RID
Source Title	Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972 Roč. 247, č. 8 (2010), s. 2022-2026
Number of pages	5 s.
Action	8th International Conference on Optics of Surfaces and Interfaces (OSI-VIII)
Event date	07.09.2009-11.09.2009
VEvent location	Ischia
Country	IT - Italy
Event type	WRD
Language	eng - English
Country	DE - Germany
Keywords	ion implantation ; Raman spectra ; Rutherford backscattering spectroscopy
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	IAA200480702 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	IAA400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	KAN400480701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GA106/09/1264 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z10480505 - UJF-V (2005-2011)
	AV0Z10100520 - FZU-D (2005-2011)
UT WOS	000281092600031
DOI	10.1002/pssb.200983932
Annotation	Si (111) covered by a 250-nm thick SiO2 surface layer has been disordered through implantation of 3.035 MeV gold ions within broad range of fluences from 1 x 10(13) ions/cm(2) to 1 x 10(16) ions/cm(2). Raman spectroscopy (514.5 nm laser) was applied for characterization of the silicon disordering. Variation of the Raman spectra of silicon after low-fluence implantation (fluences lower than 5 x 10(14) ions/cm(2)) in the vicinity of the transverse optical phonon (1TO) peak reflects the coexistence of bulk Si crystals (c-Si) and Si nanocrystals (nc-Si) in the implanted layer. Implantation with higher fluences yields only the stable 470 cm(-1) 1TO peak, corresponding to formation of amorphous phase (a-Si), in this region of the spectra. Detailed analysis of the silicon disorder was performed through calculation of the transverse acoustical phonon (1TA) peak area.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2011

Number of the records: 1