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Germanium nanowires prepared from (SiMe3)3GeH and (GeMe3)2

SYSNO ASEP	0346639
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Germanium nanowires prepared from (SiMe3)3GeH and (GeMe3)2
Author(s)	Šubrt, Jan (UACH-T)_{SAI, RID} Dřínek, Vladislav (UCHP-M)_{RID, ORCID, SAI} Fajgar, Radek (UCHP-M)_{RID, ORCID, SAI} Klementová, Mariana (UACH-T)_{RID, SAI, ORCID}
Source Title	Acta Microscopica - ISSN 0798-4545 Roč. 18, Supp C (2009), s. 77-78
Number of pages	2 s.
Action	Inter-American Congress on Electron Microscopy 2009 /10./
Event date	25.10.2009-28.10.2009
VEvent location	Rosario
Country	AR - Argentina
Event type	WRD
Language	eng - English
Country	VE - Venezuela
Keywords	germanium ; silicon
Subject RIV	CF - Physical ; Theoretical Chemistry
R&D Projects	GA203/09/1088 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z40320502 - UACH-T (2005-2011)
	AV0Z40720504 - UCHP-M (2005-2011)
Annotation	Germanium and silicon are semiconductors produced industrially on a large scale.Some advantages in the electronic structure and production technology boosted up silicon in the electronic component industry.
Workplace	Institute of Inorganic Chemistry
Contact	Jana Kroneislová, krone@iic.cas.cz, Tel.: 311 236 931
Year of Publishing	2011

Number of the records: 1