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Recognition tunneling

SYSNO ASEP	0346586
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Recognition tunneling
Author(s)	Lindsay, S. (US) He, J. (US) Sankey, O. (US) Hapala, Prokop (FZU-D)_{RID, ORCID} Jelínek, Pavel (FZU-D)_{RID, ORCID} Zhang, P. (US) Chang, S. (US) Huang, S. (US)
Source Title	Nanotechnology. - : Institute of Physics Publishing - ISSN 0957-4484 Roč. 21, č. 26 (2010), 262001/1-262001/12
Number of pages	12 s.
Language	eng - English
Country	GB - United Kingdom
Keywords	STM ; tunneling current ; molecular electronics ; DFT calculations
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA202/09/0545 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000278711100002
DOI	10.1088/0957-4484/21/26/262001
Annotation	Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ("tethered molecule-pair" configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2011

Number of the records: 1