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GROWTH OF InP CRYSTALS WITH RARE-EARTH ELEMENTS
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SYSNO ASEP 0346104 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title GROWTH OF InP CRYSTALS WITH RARE-EARTH ELEMENTS Author(s) Yatskiv, Roman (URE-Y) RID, ORCID
Grym, Jan (URE-Y)
Žďánský, Karel (URE-Y)
Pekárek, Ladislav (URE-Y)
Zavadil, Jiří (URE-Y) RIDSource Title 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM). - NEW YORK : IEE, 2009 - ISSN 1092-8669 - ISBN 978-1-4244-3432-9 Pages s. 91-93 Number of pages 3 s. Action 21st International Conference on Indium Phosphide and Related Materials Event date 10.05.2009-14.05.2009 VEvent location Newport Beach Country US - United States Event type WRD Language eng - English Country CZ - Czech Republic Keywords Rare-earth elements ; Crystals growth ; InP Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects KJB200670901 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GP102/08/P617 GA ČR - Czech Science Foundation (CSF) KAN400670651 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000270539400026 Annotation We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2011
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