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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
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SYSNO ASEP 0342123 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface Author(s) Mikhailova, M. P. (RU)
Ivanov, E.V. (RU)
Moiseev, K. D. (RU)
Yakovlev, Yu. P. (RU)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Šimeček, Tomislav (FZU-D)Source Title Semiconductors - ISSN 1063-7826
Roč. 44, č. 1 (2010), 66-71Number of pages 6 s. Language eng - English Country RU - Russian Federation Keywords electroluninescence ; MOVPE ; GaSb ; InAs ; quantum well Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000273980800010 DOI 10.1134/S1063782610010100 Annotation Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface grown by MOVPE are studied. Intense positive and negative luminescence was observed in the range of photon energies of 0.3-0.4 eV with a forward and reverse bias, respectively. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3-4 μm. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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