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Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

SYSNO ASEP	0342088
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
Author(s)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Vyskočil, Jan (FZU-D)_RID Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Kuldová, Karla (FZU-D)_{RID, ORCID}
Source Title	Surface Science. - : Elsevier - ISSN 0039-6028 Roč. 604, 3-4 (2010), 318-321
Number of pages	4 s.
Language	eng - English
Country	NL - Netherlands
Keywords	low-pressure Metal–Organic Vapor Phase ; InAs/GaAs quantum dots ; reflectance anisotropy spectroscopy Surface reconstruction ; surface reconstruction
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	IAA100100719 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GA202/09/0676 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000274979000012
DOI	10.1016/j.susc.2009.11.023
Annotation	The time resolved reflectance anisotropy spectroscopy (RAS) measurement at 4.2 eV was used for the optimization of technological parameters for Stranski-Krastanow quantum dot (QD) formation. RAS measurement helps us to study the MOVPE surface processes such as QD formation, dissolution of In from InAs QDs during the growth of GaAs capping layer or recovery of epitaxial surface from As deficiency, when As partial pressure is increased. We have shown, that the recovery of epitaxial surface from As deficiency is rather a slow process of the order of tens of seconds. For the first time was observed in situ the mechanism of In atoms migration from QDs during GaAs capping layer growth. First the GaAs layer is formed and then the In migration from QDs follows. These two processes do not start at the same time, the In dissolution is delayed. Conclusions extracted from RAS measurement are in agreement with photoluminescence results.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2011

Number of the records: 1