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Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes
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SYSNO ASEP 0341918 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes Author(s) Schauer, F. (CZ)
Schauer, Petr (UPT-D) RID, SAI, ORCID
Kuřitka, I. (CZ)
Hua, B. (CN)Number of authors 4 Source Title Materials Transactions. - : Japan Institute of Metals and Materials - ISSN 1345-9678
Roč. 51, č. 2 (2010), s. 197-201Number of pages 5 s. Language eng - English Country JP - Japan Keywords ultra violet degradability ; polysilylenes ; weak bond ; conformation defect ; nanorezists Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects IAA100100622 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20650511 - UPT-D (2005-2011) UT WOS 000276538900001 DOI 10.2320/matertrans.MC200925 Annotation The comparison of the susceptibility of aryl-substituted polysilanes to the photodegradation by electron beam (EB) and UV radiation is examined on the prototypical material, poly[methyl(phenyl)silylene] (PMPSi). The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in the long wavelength range of 400–600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. The UV degradation was a completely reversible process, whereas the EB degradation process was only reversible, provided certain material specific level of degradation was not exceeded. This observation supports different paths and final states in both UV and EB degradations. The results serve for the optimization of polysilane nanoresists. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2011
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