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Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition
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SYSNO ASEP 0341570 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition Author(s) Červenka, Jiří (FZU-D) RID, ORCID
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Výborný, Zdeněk (FZU-D)
Holovský, Jakub (FZU-D) RID, ORCID
Hruška, Karel (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAINumber of authors 9 Source Title Physica Status Solidi : Rapid Research Letters. - : Wiley - ISSN 1862-6254
Roč. 4, 1-2 (2010), s. 37-39Number of pages 3 s. Language eng - English Country DE - Germany Keywords nanowires ; silicon ; scanning electron microscopy ; hemical vapor deposition ; Raman spectroscopy Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000275226400022 DOI 10.1002/pssr.200903348 Annotation Conical silicon nanowires have been grown by gold nanoparticle catalyzed plasma-enhanced chemical vapor deposition. This method produces Si nanowires with a very fast growth rate (1 μm/min) and unique sharpness (< 10 nm). Raman spectroscopy has proved the presence of both crystalline and amorphous Si in the grown Si nanowire layer. The fast growth process of Si nanowires with dimensions below 10 nm holds promises in various applications in electronics, photovoltaics and atomic force microscopy. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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