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LPE growth of InP layers from rare-earth treated melts for radiation detector structures
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SYSNO ASEP 0341444 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title LPE growth of InP layers from rare-earth treated melts for radiation detector structures Author(s) Grym, Jan (URE-Y)
Procházková, Olga (URE-Y)
Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)Source Title Materials Science and Engineering B-Advanced Functional Solid-State Materials. - : Elsevier - ISSN 0921-5107
Roč. 165, 1-2 (2009), s. 94-97Number of pages 4 s. Language eng - English Country CH - Switzerland Keywords semiconductor technology ; rare earth elements ; III-V semiconductors Subject RIV JJ - Other Materials R&D Projects GP102/08/P617 GA ČR - Czech Science Foundation (CSF) GA102/06/0153 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000272777100024 DOI 10.1016/j.mseb.2009.03.004 Annotation Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2010
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