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Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE
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SYSNO ASEP 0341441 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE Author(s) Vaniš, Jan (URE-Y) RID
Zelinka, Jiří (URE-Y)
Malina, Václav (URE-Y)
Henini, M. (GB)
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Melichar, Karel (FZU-D)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Šroubek, Filip (UTIA-B) RID, ORCID
Walachová, Jarmila (URE-Y)Source Title Microelectronics Journal. - : Elsevier - ISSN 0026-2692
Roč. 40, č. 3 (2009), s. 496-498Number of pages 3 s. Language eng - English Country NL - Netherlands Keywords quantum dots ; ballistic transport ; semiconductor heterojunction Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/05/0242 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20670512 - URE-Y (2005-2011) AV0Z10100521 - FZU-D (2005-2011) AV0Z10750506 - UTIA-B (2005-2011) UT WOS 000264694700032 DOI 10.1016/j.mejo.2008.06.054 Annotation Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2010
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