Number of the records: 1

Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

SYSNO ASEP	0341424
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling
Author(s)	Kettle, J. (GB) Whitelegg, S. (GB) Song, M. (GB) Madec, M. B. (GB) Yeates, S. (GB) Turner, M. L. (GB) Kotačka, L. (CZ) Kolařík, Vladimír (UPT-D)_{RID, ORCID, SAI}
Number of authors	8
Source Title	Journal of Vacuum Science & Technology B. - : American Institute of Physics - ISSN 1071-1023 Roč. 27, č. 6 (2009), s. 2801-2804
Number of pages	4 s.
Language	eng - English
Country	US - United States
Keywords	argon ; milling ; nanolithography ; organic semiconductors ; semiconductor diodes
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	GA102/05/2325 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z20650511 - UPT-D (2005-2011)
UT WOS	000272803400095
DOI	10.1116/1.3253606
Annotation	In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2010

Number of the records: 1