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Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts
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SYSNO ASEP 0341232 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts Author(s) Šrobár, Fedor (URE-Y)
Procházková, Olga (URE-Y)Source Title Crystal Research and Technology - ISSN 0232-1300
Roč. 44, č. 6 (2009), s. 597-602Number of pages 6 s. Language eng - English Country DE - Germany Keywords semiconductors Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA102/09/1037 GA ČR - Czech Science Foundation (CSF) GA102/06/0153 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000267101200004 DOI 0.1002/crat.200900051 Annotation Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2010
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